Nanoscience and Nano Technology

Biography

Biography: Somnath Bhattacharyya

Abstract

Diamond is considered as the ideal material for making quantum devices since the lattice constant does not change even in extreme conditions. The ways one can construct qubits in diamond are creating nitrogen vacancy centers and superconducting quantum interference devices. Although the later one has not realized yet, we find there are some similarities between two cases based on the recently developed concept of topological nature of diamond nitrogen vacancy centers and the transport property measurements in the boron-doped nanocrystalline diamond films. Over decade superconductivity in boron-doped diamond initiated intense research due to possible unconventional superconducting state. This can be established in two ways namely introducing graphitic carbon layers which can have a chiral nature and incorporating excess boron atoms in diamond lattice which can form a spin triplet state. Having understood a non-s wave character of these diamond films we are searching for p-wave (odd frequency) character which is related to topologically protected phases. This work will potentially motivate us for a deeper study into the application of this material for a new class of topological qubit which has the capability of revolutionizing the field of quantum computing. The theoretically predicted non-Abelian gauge field and associated Berry phase in diamond system is to be realized experimentally. In this talk we elaborate the novel heterostructures of superconducting nanodiamond films and some exotic transport properties that can be useful for developing topological qubits. Some quantum device concepts combining nitrogen vacancy center and boron doped superconducting diamond are thus discussed.